Solid state imaging device and electronic apparatus

ABSTRACT

A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include photoelectric conversion units is arranged; a peripheral circuit unit that is formed in a lower portion in the substrate depth direction of the pixel region and that includes an active element; and a light shielding member that is formed between the pixel region and the peripheral circuit unit and that shields the incidence of light, emitted from an active element, to the photoelectric conversion unit.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/881,818, filed Oct. 13, 2015, which is a continuation of U.S. patentapplication Ser. No. 14/057,542, filed Oct. 18, 2013, now U.S. Pat. No.9,197,829, which is a continuation of U.S. patent application Ser. No.13/227,851, filed Sep. 8, 2011, now U.S. Pat. No. 8,587,040, whichclaims priority to Japanese Patent Application Serial No. JP2010-206890, filed in the Japan Patent Office on Sep. 15, 2010, theentire disclosures of which are hereby incorporated herein by reference.

BACKGROUND

The present disclosure relates to a solid state imaging device and anelectronic apparatus such as a camera that is provided with the solidstate imaging device.

In recent years, electronic cameras have become increasingly widespread,and demand for solid state imaging devices (image sensors) that are thecentral components thereof has been growing further. In terms ofperformance, there are ongoing technical developments for realizingimprovements in image quality and functionality. Meanwhile, videocameras and mobile cameras, as well as mobile phones, PDAs (PersonalDigital Assistants), laptop personal computers, and the like have beenpopularized. As these become increasingly popularized, attempts to makesolid state imaging devices and also the components thereof smaller,lighter, and thinner to facilitate transportation, and attempts toreduce costs in order to expand their adoption, are becoming important.

In the related art, a solid state imaging device, for example, a MOStype solid state imaging device includes photoelectric conversion units,an amplification circuit, and a multilayer wiring layer formed on afirst main surface (acceptance surface) side on a silicon substrate, anda chip with an on-chip micro-lens or a color filter formed thereon. Asolid state imaging device is configured by affixing a cover glass to afirst main surface of the chin by a spacer such as an adhesive andforming a terminal on a second main surface side of the chip.

Chips that are equipped with a signal processing circuit for processingan output image are connected to the solid state imaging device. Theprocessing performed by the signal processing circuit has beendiversifying along with the increasing number of functions of the solidstate imaging device.

There are many steps being taken to continue the miniaturization of sucha plurality of functions and a plurality of chips. For example,miniaturization is performed by including a plurality of chips in onepackage using a SIP (Silicon in Package) technique. In such a case,although it is an advantage that miniaturization is able to be realizedby combining existing chips, there is an adverse effect that, sincetransmission distances for connecting the chips become long and ahigh-speed connection becomes difficult, it is difficult to realize ahigh-speed action.

On the other hand, a solid state imaging device which a light shieldingmember that screens emitted light caused by impact ionization occurringin an output circuit is arranged between a source follower circuit thatbecomes an output circuit and photoelectric conversion units which areformed within the same plane of a semiconductor substrate is shown inJapanese Unexamined Patent Application Publication No. 2002-43556.

SUMMARY

With regard to the solid state imaging device, efforts to realizehigh-speed transmission of the signal by affixing and joining each of aplurality of chips have been begun. However, in such a case, since thephotoelectric conversion units and a peripheral circuit unit are formedin close proximity, problems arise that are unique to the solid stateimaging device. Since the photoelectric conversion units treat minisculecarriers (for example, electrons) as signals, the influence of heat orelectromagnetic fields from circuits in the vicinity is easily mixed inas noise. In addition, miniscule hot carrier luminescence that isemitted from transistors, which seldom causes a problem in the usualcircuit action of the transistors, also has a large influence on thecharacteristics of the solid state imaging device.

The hot carrier luminescence is luminescence that is emitted by ageneration and recombination between electrons, which appear whencarriers that are accelerated between a source and a drain are ionizedby collision at the drain end, and positive holes, or by a transition inthe state of either. The luminescence is regularly emitted, albeit in aminiscule amount, even with transistors, the characteristics of whichpose no problems. Since the luminescence is scattered in all directions,the influence thereof is very small when further away from thetransistors. However, in a case when the photoelectric conversion unitsand circuits configured by the transistors are arranged very closely, aconsiderable number of photons are injected into the photoelectricconversion units without much diffusion of the luminescence.

Due to the inadequate diffusion, the luminescence distribution of hotcarrier luminescence caused by a difference in the transistorarrangement density or the active rate is projected onto an image astwo-dimensional information. Therefore, light shielding for restrictingthe injection amount of the hot carrier luminescence into thephotoelectric conversion units to be at a detection limit or lowerbecomes important.

In addition, a protection circuit for protecting circuit elements from asurge voltage is built into the peripheral circuits. With a protectiondiode that configures the protection circuit, a luminescence phenomenonoccurs when a reverse bias voltage is applied when acting and when in abroken down state. If such luminescence enters the photoelectricconversion units, similarly to the description above, a large influenceis exerted on the characteristics of the solid state imaging device.

It is desirable to provide a solid state imaging device in which a pixelregion and peripheral circuits are provided in close proximity above andbelow the other within a substrate, where image quality is improved bysuppressing the infiltration of the photoelectric conversion units bylight emitted from an active element such as a transistor or a diodethat is acting.

It is desirable to provide an electronic apparatus such as a camera thatincludes such a solid state imaging device.

A solid state imaging device according to an embodiment of thedisclosure includes a pixel region that is formed on a light incidenceside of a substrate and to which a plurality of pixels that includephotoelectric conversion units is arranged, and a peripheral circuitunit that is formed in a lower portion in the substrate depth directionof the pixel region and that includes an active element. Furthermore,the embodiment of the disclosure includes a light shielding member thatis formed between the pixel region and the peripheral circuit unit andthat shields the incidence of light, emitted from an active element, tothe photoelectric conversion units.

In the solid state imaging device according to the embodiment of thedisclosure, the pixel region and the peripheral circuit unit arethree-dimensionally arranged above and below the other within asubstrate. Since a light shielding member is provided between thethree-dimensionally arranged pixel region and the peripheral circuitunit, even if the pixel region and the peripheral circuits are arrangedin close proximity, light that is emitted from the active element whenthe active element of the peripheral circuit unit is acting is shieldedby the light shielding member, and infiltration of light into thephotoelectric conversion units is suppressed.

An electronic apparatus according to another embodiment of thedisclosure includes a solid state imaging device, an optical system thatguides incident light to photoelectric conversion units of the solidstate imaging device, and a signal processing circuit that processes anoutput signal of the solid state imaging device. The solid state imagingdevice includes a pixel region that is formed on a light incidence sideof a substrate and to which a plurality of pixels that includephotoelectric conversion units is arranged, and a peripheral circuitunit that is formed in a lower portion in the substrate depth directionof the pixel region and that includes an active element. Furthermore,the embodiment of the disclosure includes a light shielding member thatis formed between the pixel region and the peripheral circuit unit andthat shields the incidence of light, emitted from an active element whenthe active element is acting, to the photoelectric conversion units.

Since an electronic apparatus according to the embodiment of thedisclosure includes a solid state imaging device according to theembodiment of the disclosure described above, in the solid state imagingdevice, light that is emitted from the active element when the activeelement of the peripheral circuit unit is acting is shielded by thelight shielding member, and infiltration of light into the photoelectricconversion units is suppressed.

According to a solid state imaging device according to the embodiment ofthe disclosure, since light that is emitted from the active element whenthe active element of the peripheral circuit unit is acting is shieldedby the light shielding member, and infiltration of light into thephotoelectric conversion units is suppressed, the image quality of thesolid state imaging device is able to be improved.

According to an electronic apparatus according to the embodiment of thedisclosure, although light is emitted when an active element of theperipheral circuit unit of the solid state imaging device is acting,since infiltration of light to the photoelectric conversion units issuppressed by the light shielding member, the image quality of the solidstate imaging device is improved. In such a manner, an electronicapparatus that is able to obtain a high image quality is able to beprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an outline configuration example diagram that illustrates anexample of a MOS type solid state imaging device that is applied to anembodiment of the disclosure;

FIGS. 2A to 2C are schematic diagrams of a solid state imaging deviceaccording to an embodiment of the disclosure;

FIG. 3 is an outline configuration diagram that illustrates a firstembodiment of a solid state imaging device according to an embodiment ofthe disclosure;

FIG. 4A is an outline cross-sectional diagram that illustrates anexample of a light shielding member according to the first embodiment ofthe disclosure, and FIG. 4B is an outline plan view that illustrates anexample of a light shielding member according to the first embodiment ofthe disclosure;

FIG. 5A is an outline plan view that illustrates another example of alight shielding member according to the first embodiment of thedisclosure, and FIG. 5B is a cross-sectional diagram viewed along linesVB-VB of FIG. 5A;

FIG. 6 is an outline diagram that illustrates another example of a lightshielding member of the first embodiment;

FIG. 7 is an outline diagram that illustrates another example of a lightshielding member of the first embodiment;

FIG. 8 is an outline configuration diagram that illustrates a secondembodiment of a solid state imaging device according to an embodiment ofthe disclosure;

FIG. 9 is an outline configuration diagram that illustrates a thirdembodiment of a solid state imaging device according to an embodiment ofthe disclosure;

FIG. 10 is an outline configuration diagram of the main portions whichillustrates a fourth embodiment of a solid state imaging deviceaccording to an embodiment of the disclosure;

FIG. 11 is an outline configuration diagram of the main portions whichillustrates a fifth embodiment of a solid state imaging device accordingto an embodiment of the disclosure;

FIG. 12 is an outline configuration diagram of the main portions whichillustrates a sixth embodiment of a solid state imaging device accordingto an embodiment of the disclosure;

FIG. 13 is an outline configuration diagram of the main portions whichillustrates a seventh embodiment of a solid state imaging deviceaccording to an embodiment of the disclosure;

FIG. 14 is an outline configuration diagram of the main portions whichillustrates a modification example according to the second embodiment;

FIG. 15 is an outline configuration diagram that illustrates an eighthembodiment of a solid state imaging device according to an embodiment ofthe disclosure;

FIG. 16 is an outline configuration diagram that illustrates a ninthembodiment of a solid state imaging device according to an embodiment ofthe disclosure; and

FIG. 17 is an outline configuration diagram that illustrates anelectronic apparatus according to an eleventh embodiment of thedisclosure.

DETAILED DESCRIPTION OF EMBODIMENTS

The embodiments of the disclosure will be described below with referenceto the drawings. Here, the description will be given in the followingorder.

1. Outline Configuration Example of MOS Type Solid state Imaging DeviceApplied to Embodiment of Disclosure

2. First Embodiment (Configuration Example of Solid State ImagingDevice)

3. Second Embodiment (Configuration Example of Solid State ImagingDevice)

4. Third Embodiment (Configuration Example of Solid State ImagingDevice)

5. Fourth Embodiment (Configuration Example of Solid State ImagingDevice)

6. Fifth Embodiment (Configuration Example of Solid State ImagingDevice)

7. Sixth Embodiment (Configuration Example of Solid State ImagingDevice)

8. Seventh Embodiment (Configuration Example of Solid State ImagingDevice)

9. Eighth Embodiment (Configuration Example of Solid State ImagingDevice)

10. Ninth Embodiment (Configuration Example of Solid State ImagingDevice)

11. Tenth Embodiment (Configuration Example of Solid State ImagingDevice)

12. Eleventh Embodiment (Configuration Example of Electronic Apparatus)

1. Outline Configuration Example of MOS Type Solid State Imaging DeviceApplied to Embodiment of Disclosure

FIG. 1 illustrates an outline configuration of a MOS type solid stateimaging device that is applied to an embodiment of the disclosure. TheMOS type solid state imaging device is applied to the solid stateimaging device of each embodiment. A solid state imaging device 1 of thepresent example is configured to include a pixel region (a so-calledpixel array) 3 in which a plurality of pixels 2 including photoelectricconversion units is systematically arranged in a two-dimensional arrayform on a semiconductor substrate (not shown in the drawings), forexample, a silicon substrate, and a peripheral circuit unit. A pixel 2is formed to include, for example, a photodiode that is a photoelectricconversion unit, and a plurality of pixel transistors (so-called MOStransistors). The plurality of pixel transistors is able to be composedof, for example, three transistors of a transfer transistor, a resettransistor, and an amplification transistor. In addition, a selectiontransistor may be added to configure the plurality of pixel transistorsusing four transistors. Since the equivalent circuits of a unit pixelare the same as usual, the description thereof will be omitted. Thepixel 2 is able to be configured as one unit pixel. Further, the pixel 2is able to have a shared pixel structure. The shared pixel configurationis a structure in which a plurality of photodiodes shares a floatingdiffusion that configures the transfer transistor and transistors otherthan the transfer transistor.

The peripheral circuit unit is configured to include a vertical drivingcircuit 4, a column signal processing circuit 5, a horizontal drivingcircuit 6, an output circuit 7, and a control circuit 8.

The control circuit 8 receives an input clock and data that instructs anaction mode or the like, and outputs data such as internal informationof the solid state imaging device or the like. That is, in the controlcircuit 8, a clock signal or a control signal that is the standard ofthe actions or the like of the vertical driving circuit 4, the columnsignal processing circuit 5, and the horizontal driving circuit 6 isgenerated based on a vertical synchronization signal, a horizontalsynchronization signal, and a master clock. Further, such signals areinput to the vertical driving circuit 4, the column signal processingcircuit 5, the horizontal driving circuit 6, and the like.

The vertical driving circuit 4 is, for example, configured by a shiftregister, selects a pixel driving wiring, supplies a pulse for drivingpixels to the selected pixel driving wiring, and drives the pixels inunits of rows. That is, the vertical driving circuit 4 selectively scanseach pixel 2 of the pixel region 3 sequentially in units of rows in thevertical direction, and supplies, through a vertical driving line 9, apixel signal based on a signal charge generated according to alight-receiving amount of, for example, a photodiode that is thephotoelectric conversion unit of each pixel 2 to the column signalprocessing circuit 5.

The column signal processing circuit 5 is arranged, for example, byunits of rows of the pixels 2, and performs signal processing such asnoise removal on signals output from the pixels 2 equivalent to one linefor each pixel row. That is, the column signal processing circuit 5performs signal processing such as a CDS for removing fixed patternnoise that is unique to the pixels 2, signal amplification, and ADconversion. A horizontal selection switch (not shown in the drawings) isconnected and provided between an output stage of the column signalprocessing circuit 5 and a horizontal signal line 10.

The horizontal driving circuit 6 is configured by, for example, a shiftregister, and selects, by sequentially outputting a horizontal scanningpulse, each of the column signal processing circuits 5 in order, andcauses a pixel signal to be output from each of the column signalprocessing circuits 5 to the horizontal signal line 10.

The output circuit 7 performs signal processing on a signal that issequentially supplied from each of the column signal processing circuits5 through the horizontal signal line 10, and outputs the signal. Forexample, there is a case when only buffering is performed, and there isa case when black level adjustment, row variation correction, varioustypes of digital signal processing, and the like are performed. An inputand output terminal 12 processes signals with external portions.

Next, the structure of a MOS type solid state imaging device accordingto the embodiment will be described. FIG. 2A is an outline configurationdiagram that illustrates the structure of a MOS type solid state imagingdevice of the related art, and FIGS. 2B and 2C are outline configurationdiagrams that illustrate the structure of the MOS type solid stateimaging device according to the embodiment.

A MOS type solid state imaging device 151 of the related art isconfigured by equipping, as illustrated in FIG. 2A, within onesemiconductor chip 152, a pixel region 153, a control circuit 154, and alogic circuit 155 for signal processing. Ordinarily, an image sensor 156is configured by the pixel region 153 and the control circuit 154.

On the other hand, a MOS type solid state imaging device 21 of theembodiment example is equipped, as illustrated in FIG. 2B, with a pixelregion 23 on a first semiconductor chip unit 22, and is equipped with acontrol circuit 24 and a logic circuit 25 including a signal processingcircuit on a second semiconductor chip unit 26. The MOS type solid stateimaging device 21 is configured as one semiconductor chip by mutuallyelectrically connecting the first semiconductor chip unit 22 and thesecond semiconductor chip unit 26.

A MOS type solid state imaging device 27 according to another embodimentexample of an embodiment of the disclosure is equipped, as illustratedin FIG. 2C, with the pixel region 23 and the control circuit 24 on thefirst semiconductor chip unit 22, and is equipped with the logic circuit25 including a signal processing circuit on the second semiconductorchip unit 26. A MOS type solid state imaging device 27 is configured asone semiconductor chip by mutually electrically connecting the firstsemiconductor chip unit 22 and the second semiconductor chip unit 26.

Furthermore, although not shown in the drawings, a MOS type solid stateimaging device according to still another embodiment example of anembodiment of the disclosure is equipped with the pixel region 23 and acontrol circuit unit that is suited to the control of a pixel regionthat is one portion of the control circuit on the first semiconductorchip unit 22. Further, the MOS type solid state imaging device isequipped with the logic circuit 25 and a control circuit unit that issuited to the control of the logic circuit that is another portion ofthe control circuit, on the second semiconductor chip unit 26. The MOStype solid state imaging device 27 is configured as one semiconductorchip by mutually electrically connecting the first semiconductor chipunit 22 and the second semiconductor chip unit 26.

The MOS type solid state imaging device according to the embodimentexample described above has a structure in which different types ofsemiconductor chips are laminated, and has a feature described below.

2. First Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a first embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 3. The MOS type solid stateimaging device according to the embodiment is a backside-illuminationtype solid state imaging device. Although the MOS type solid stateimaging device according to the embodiment applies the configuration ofFIG. 2C, it is able to apply the configuration of another diagram 2B ora configuration in which the control circuit is equipped by beingdivided into each of the first and second semiconductor chip units. In asecond embodiment and subsequent embodiments, similarly, the aboveconfigurations are able to be applied.

A solid state imaging device 28 according to the first embodiment isconfigured by a first semiconductor chip unit 31 and a secondsemiconductor chip unit 45 being affixed together. A pixel array(hereinafter, referred to as a pixel region) 23 that is a pixel composedof a photodiode PD that is a photoelectric conversion unit and aplurality of pixel transistors arranged two-dimensionally in pluralityand a control circuit 24 are formed on the first semiconductor chip unit31.

The photodiode PD is formed to include an n type semiconductor region 34within a semiconductor well region 32 and a p type semiconductor region35 on a substrate front surface side. A gate electrode 36 is formed onthe substrate front surface that configures the pixels via a gateinsulating film, and pixel transistors Tr1 and Tr2 are formed by a pairof the gate electrode 36 and a source and drain region 33. In FIG. 3, aplurality of pixel transistors is representatively illustrated by thetwo pixel transistors Tr1 and Tr2. The pixel transistor Tr1 that isadjacent to the photodiode PD is equivalent to a transfer transistor,and the source and drain region thereof is equivalent to a floatingdiffusion FD. Each unit pixel is separated by an element separationregion 38.

On the other hand, the control circuit 24 is configured by a pluralityof MOS transistors, each of which is formed in the semiconductor wellregion 32. In FIG. 3, MOS transistors Tr3 and Tr4 are representativelyillustrated as the plurality of MOS transistors that configures thecontrol circuit 24. Each MOS transistor Tr3 and Tr4 is formed by the ntype source and drain region 33 and the gate electrode 36 that is formedvia the gate insulating film.

A multilayer wiring layer 41 that is a wiring 40 of a plurality oflayers arranged via an interlayer insulating film 39 is formed on asubstrate front surface side. The wiring 40 is formed by, for example, acopper wiring. Pixel transistors and MOS transistors of the controlcircuit are connected to the appropriate wiring 40 via a connectedconductor 44 that penetrates a first insulating film 43 a and a secondinsulating film 43 b. The first insulating film 43 a is formed by, forexample, a silicon oxide film, and the second insulating film 43 b isformed by, for example, a silicon nitride film that is an etchingstopper.

A reflection prevention film 61 is formed on the back surface of thesemiconductor well region 32. A waveguide 70 by a waveguide materialfilm (for example, a SiN film or the like) 69 is formed in a region thatcorresponds to each photodiode PD on the reflection prevention film 61.A light shielding film 63 that shields light to the appropriate regionsis formed within an insulating film 62 made of, for example, a SiO filmon a back surface of the semiconductor well region 32. Further, a colorfilter 73 and an on-chip micro-lens 74 are formed via a planarizing film71 to correspond with each photodiode PD.

On the other hand, a logic circuit 25 including a signal processingcircuit for signal processing is formed on the second semiconductor chipunit 45. The logic circuit 25 is configured to have a plurality of MOStransistors formed on, for example, a p type semiconductor well 46 to beseparated by an element separation region 50. Here, the plurality of MOStransistors is represented by MOS transistors Tr6, Tr7, and Tr8. EachMOS transistor Tr6, Tr7, and Tr8 is formed to include a pair of n typesource and drain region 47 and a gate electrode 48 formed via a gateinsulating film.

A wiring 53 of a plurality of layers and a multilayer wiring layer 55that is a wiring 57 including a barrier metal layer 58 arranged areformed on a semiconductor well region 46 via an interlayer insulatingfilm 49. Each of the MOS transistors Tr6, Tr7, and Tr8 is connected tothe appropriate wiring 53 via a connected conductor 54 that penetratesthe first insulating film 43 a and the second insulating film 43 b.

The first semiconductor chip unit 31 and the second semiconductor chipunit 45 are affixed, for example, via an adhesive layer 60 so that themultilayer wiring layers 41 and 55 of each face the other. A stresscompensation film 59 for reducing the stress of affixing is formed on anaffixing face of the multiplayer wiring layer 55 on the secondsemiconductor chip unit 45 side. Otherwise, the affixing is alsopossible by plasma bonding.

Furthermore, the first semiconductor chip unit 31 and the secondsemiconductor chip unit 45 are electrically connected via a connectedconductor 68. That is, connection holes that reach the appropriatewiring 40 of the multilayer wiring layer 41 by penetrating thesemiconductor well region 32 of the first semiconductor chip unit 31 areformed. Further, connection holes that reach the appropriate wiring 53of the multilayer wiring layer 55 of the second semiconductor chip unit45 by penetrating the semiconductor well region 32 and the multilayerwiring layer 39 of the first semiconductor chip unit 31 are formed. Thefirst and second semiconductor chip units 31 and 45 are electricallyconnected by embedding a connected conductor 68 that is mutually coupledwith such connection holes. The surroundings of the connected conductor68 are covered by an insulating film 67 for insulating from thesemiconductor well region 32. The wirings 40 and 57 connected to theconnected semiconductor 68 correspond to a vertical signal line. Theconnected conductor 68 is connected to an electrode pad (not shown inthe drawings), or may be an electrode pad.

Formation of the connected conductor 68 is performed after affixing thefirst semiconductor chip unit 31 and the second semiconductor chip unit45 and after thinning the semiconductor well region 32 of the firstsemiconductor chip unit 31. A cap film 72, a planarizing film 71, acolor filter 73, and an on-chip micro-lens 74 are formed thereafter. Aninsulating spacer layer 42 is formed in a region that surrounds theconnected conductor 68 in the semiconductor well region 32.

The solid state imaging device 28 of the embodiment has the pixel region23 and the logic circuit 25 of the peripheral circuit unit arrangedabove and below in the substrate depth direction, and moreover has thephotodiode PD and the MOS transistors Tr6 to Tr8 of the logic circuit 25positioned in close proximity to each other.

There is a case when a protection diode is provided within the logiccircuit 25 of the peripheral circuit unit.

In addition, in the embodiment, in particular, a light shielding memberthat shields light, emitted from an active element when the activeelement of the peripheral circuit unit is acting, from being incident onthe photodiode PD of the pixels between the pixel region and theperipheral circuit unit is arranged. The active element is the MOStransistor, the protection diode, or the like. In the example, a lightshielding member 81 is arranged between the pixel region 23 and thelogic circuit 25 that configures the peripheral circuit unit.

In the embodiment, the light shielding member 81 is formed on theappropriate wiring 40 of a plurality of layers of the multilayer wiringlayer 41 of the first semiconductor chip unit 31. In the example shownin the drawings, when the wiring 40 has three layers, the lightshielding member 81 is able to be formed on the wiring 40 of a secondlayer and a third layer that are close to the second semiconductor chipunit 45. In such a case, in order to cover the pixel region 23 withoutgaps, for example, as illustrated in FIGS. 4A and 4B, the lightshielding member 81 is configured so that a wiring 402 of the secondlayer and a wiring 403 of the third layer partially overlap one another.Since the wiring 40 is formed of metal, the wirings 402 and 403 are alsonaturally formed of metal. Therefore, the light shielding member 81 thatis configured using the wiring 40 becomes a reflection and dispersionmember.

In FIGS. 4A and 4B, an overlapping amount d2 of the wirings 402 and 403of the second layer and the third layer is determined by a distance d1between the wirings and an opening width d3. For example, since hotcarrier light is generated as a point light source, light that entersdiagonally ought also to be shielded. Therefore, diagonal lightcomponents are shielded by maintaining the overlapping amount d2 to beat least larger than the distance d1 between the wirings.

Another example of the light shielding member 81 is also able to beconfigured, as illustrated in FIGS. 5A and 5B (cross-section over linesVB-VB in FIG. 5A), by forming the wiring 403 of the third layer in alattice form, and forming the wiring 402 of the second layer so as toplug each lattice square and to partially overlap the wiring 403.

Another example of the light shielding member 81 is able to beconfigured, as illustrated in FIG. 6, by arranging the wiring 403 of thethird layer that extends in one direction and the wiring 402 of thesecond layer that similarly extends in one direction so that a portionof each is overlapped.

Still another example of the light shielding member 81 is able to beconfigured as illustrated in FIG. 7. That is, the light shielding member81 is able to be configured by arranging the wiring 403 of the thirdlayer that extends in one direction, the wiring 402 of the second layerthat extends in another direction to be orthogonal to the wiring 403,and a wiring 401 of a first layer that plugs each opening on which thewirings 402 and 403 of the second and third layers are not overlapped.

Embodiments of the light shielding member are not limited to the exampledescribed above, and various other embodiments are able to be adopted.The light shielding member 81 that reflects and disperses light usingthe wiring 40 of a plurality of layers is able to be configured by acombination of the wirings, a combination of the wirings and dummywirings that are not used as wirings, and a combination of dummywirings.

The light shielding member 81 using the above described wiring isconfigured using the wiring 40 of the multilayer wiring layer of thefirst semiconductor chip unit 31. Otherwise, as shown by the broken linein FIG. 3, a light shielding member 81′ is able to be configured byarranging the wiring 53 of the multilayer wiring layer 55 of the secondsemiconductor chip unit 45 as described above and reflecting anddispersing light. The light shielding member is able to be configured bythe light shielding member 81 that is formed on the first semiconductorchip unit 31 side, the light shielding member 81′ that is formed on thesecond semiconductor chip unit 45 side, or a combination of the lightshielding member 81 and the light shielding member 81′.

According to the solid state imaging device 28 according to the firstembodiment, the light shielding member 81 is arranged between thephotodiodes PD of the pixel region 23 and the logic circuit 25 that ispositioned in close proximity below the photodiodes PD when seen fromthe light incidence side. That is, the light shielding member 81 thatreflects and disperses light is arranged. The hot carrier light that isemitted from the MOS transistors of the logic circuit 25 is shielded bythe light shielding member 81, and is not incident on the photodiodesPD. In particular, when the light shielding member 81 is formed so thata portion of the wirings is overlapped, the influence of the diffractionof light is able to be prevented by the light shielding member 81, andthe incidence of hot carrier light from below to the photodiodes PD isable to be suppressed. When the light shielding member 81′ or acombination of the light shielding members 81 and 81′ is used, it isalso similarly possible to suppress the incidence of hot carrier lightto the photodiodes PD. Therefore, the hot carrier light being projectedon the pixel region is avoided, and a solid state imaging device inwhich the image quality is thus improved is able to be provided.

Light that is emitted when the protection diode is acting is also ableto be suppressed from being incident on the photodiodes PD.

With the light shielding member 81 using wirings, an attenuationfunction of the electromagnetic field that is generated at the secondsemiconductor chip unit 45 is obtained.

The pixel region 23 and the control circuit 24 are formed on the firstsemiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45 in the solidstate imaging device 28 of the embodiment. In so doing, since it is aconfiguration in which the function of the pixel region and the logicfunction are formed and joined on different semiconductor chip units,the most appropriate process forming techniques are able to be usedrespectively for the pixel region 23 and the logic circuit 25.Therefore, a high-performance solid state imaging device in which thefunctions of each of the pixel region and the logic circuit are able tobe adequately demonstrated is able to be provided.

3. Second Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a second embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 8. The MOS type solid stateimaging device of the embodiment is a backside-illumination type solidstate imaging device. In a solid state imaging device 83 of the secondembodiment, similarly to above, a light shielding member that shieldslight, emitted from an active element when the active element of theperipheral circuit unit is acting, from being incident on thephotodiodes PD of the pixels between the pixel region and the peripheralcircuit unit is arranged. The active element is the MOS transistor, theprotection diode, or the like.

In the embodiment, light shielding member 84 of a single metallic filmwhich covers the pixel region 23 without gaps is arranged between thepixel region 23 and the logic circuit 25 that configures the peripheralcircuit unit. In the present example, the light shielding member 84 isarranged in the vicinity of a joining face of the first semiconductorchip unit 31 and the second semiconductor chip unit 45, that is, abovethe multilayer wiring layer 41 on a first semiconductor chip unit 31. Asa metallic material that configures the light shielding member 84,tungsten (W), copper (Cu), titanium (Ti), titanium nitride (TiN), carbon(C), or the like is able to be used. For example, in a case whentungsten (W) or titanium (Ti) is used, a light shielding characteristicof approximately two digits is able to be obtained by a film thicknessof approximately 100 nm.

Here, the light shielding member 84 may be arranged anywhere as long asit is between the pixel region 23 and the MOS transistors of the logiccircuit 25.

The light shielding member 84 described above is arranged in thevicinity of a joining face on the first semiconductor chip unit 32 side.Otherwise, as shown by the broken line in FIG. 8, a light shieldingmember 84′ of a single metallic film is also able to be arranged in thevicinity of a joining face of the second semiconductor chip unit 45side. Further, a total light shielding member is also able to beconfigured by a combination of the light shielding members 84 and 84′.The light shielding members 84 and 84′ by a single metallic film becomereflection and dispersion members.

The light shielding member 84 and 84′ may be connected a light source,or may be connected to a ground. Alternatively, the light shieldingmembers 84 and 84′ may be electrically floating.

In FIG. 8, since other configurations are the same as those described inthe first embodiment, the portions that correspond to FIG. 3 are giventhe same symbols and the detailed description thereof is omitted.

According to the solid state imaging device 83 according to the secondembodiment, a light shielding member 84 of a single metallic film isarranged between the pixel region 23 and the logic circuit 25, forexample, in the vicinity of a joining face of the first and secondsemiconductor chip units 31 and 45. Hot carrier light that is emittedfrom the MOS transistors of the logic circuit 25 is shielded by thelight shielding member 84, and is not incident on the photodiodes PD.When the light shielding member 84′ or a combination of the lightshielding members 84 and 84′ is used, it is also similarly possible tosuppress the incidence of hot carrier light on the photodiodes PD.Therefore, the hot carrier light being projected on the pixel region isavoided, and a solid state imaging device in which the image quality isthus improved is able to be provided.

Light that is emitted when the protection diode is acting is also ableto be suppressed from being incident on the photodiodes PD.

With the light shielding member 84 of a single metallic film, a functionas a head spreader that diffuses the head generated from the secondsemiconductor chip unit 45 side that includes a logic circuit and anattenuation function of the electromagnetic field that is generated atthe second semiconductor chip unit 45 are obtained. The light shieldingmembers 84 and 84′ are, when connected to a power source, able to beused as a power source stabilization capacity.

The pixel region 23 and the control circuit 24 are formed on the firstsemiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45 in the solidstate imaging device 83 of the embodiment. Similarly to above, since itis a configuration in which the function of the pixel region and thelogic function are formed and joined on different semiconductor chipunits, the most appropriate process forming techniques are respectivelyable to be used for the pixel region 23 and the logic circuit 25.Therefore, a high-performance solid state imaging device in which thefunctions of each of the pixel region and the logic circuit are able tobe adequately demonstrated is able to be provided.

Modification Example

In the second embodiment, the light shielding member 84 that is a singlemetallic film and composed of a reflection and dispersal member isformed. At this time, although it is desirable that the interval betweenthe metallic light shielding member 84 and the connected conductor 68 isas narrow as possible in order that light does not easily pass through,if the interval is narrowed, a parasitic capacitance C (refer to FIG.14) becomes large, which is not preferable.

In the modification example, as illustrated in FIG. 14, the lightshielding member 84 that is a single metallic film is formed to beseparated from the connected conductor 68 to an extent to which theparasitic capacitance does not exert an influence. On the other hand, adummy wiring 57′ of another layer is formed so as to partially overlap awiring 57 on an upper layer of the wiring 57 that is connected to theconnected conductor 68 and at the same to surround the connectedconductor 68, and a cylindrical wall member (a so-called via) 57A forsealing is formed between the dummy wiring 57′ and the wiring 57. Bysuch a configuration, even if the interval between the connectedconductor 68 and the light shielding member 84 is widened, light 103from the logic circuit side is shielded by the cylindrical wall member57A, and incidence of light to the photodiodes PD is suppressed.

4. Third Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a third embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 9. The MOS type solid stateimaging device of the embodiment is a backside-illumination type solidstate imaging device. In a solid state imaging device 86 of the thirdembodiment, similarly to above, a light shielding member that shieldslight, emitted from an active element when the active element of theperipheral circuit unit is acting, from being incident on thephotodiodes PD of the pixels between the pixel region and the peripheralcircuit unit is arranged. The active element is the MOS transistor, theprotection diode, or the like.

In the embodiment, a light shielding member 87 of a light absorbingmember that absorbs light is arranged between the pixel region 23 andthe logic circuit 25 that configures the peripheral circuit unit, so asto cover the pixel region 23 without gaps. In the present example, thelight shielding member 87 is arranged in the vicinity of a joining faceof the first semiconductor chip unit 31 and the second semiconductorchip unit 45, that is, above the multilayer wiring layer 41 on a firstsemiconductor chip unit 31. The light shielding member 87 has a functionof absorbing hot carrier light from the MOS transistors of the logiccircuit and preventing the light from being incident on the photodiodesPD. The light shielding member 87 has a color mixing prevention functionof preventing light exposed from a back surface from not beingcompletely absorbed by the pixels and permeating, reflecting by thewiring of the second semiconductor chip unit 45, and causing colormixing by being incident on the photodiodes PD of other pixels.

As a light absorbing member that configures the light shielding member87, a single film of a semiconductor with a narrower band gap thangermanium (Ge) or silicon of a synthetic type (for example, chalcopyriteCuInSe2) or the like is able to be used. Silicon is used as thesubstrate in the first and second semiconductor chip units 31 and 45. Asemiconductor film that has a narrower band gap than silicon has a highabsorption rate of a near-infrared region, and in the case of germanium(Ge), for example, the absorption rate is approximately ten times thelevel of silicon (Si). That is, approximately two digits of photons areabsorbable with a film thickness of approximately one tenth. For such areason, light of the near-infrared region is able to be absorbed by a Gefilm of a film thickness of 1 μm to several μm.

A reflection prevention film that is each of a plurality of dielectricfilms, with different dielectric constants, that are laminated is ableto be used as the light absorbing member that configures the lightshielding member 87. A silicon oxide film, a silicon nitride film, orthe like, for example, is able to be used as the dielectric films withdifferent dielectric constants.

The light shielding member 87 described above is arranged in thevicinity of a joining face on the first semiconductor chip unit 32 side.Otherwise, as shown by the broken line in FIG. 9, a light shieldingmember 87′ of a light absorbing member is also able to be arranged inthe vicinity of a joining face of the second semiconductor chip unit 45side. Further, a total light shielding member is also able to beconfigured by a combination of the light shielding members 87 and 87′.The light shielding members 87 and 87′ are light absorbing members.

In FIG. 9, since other configurations are the same as those described inthe first embodiment, the portions that correspond to FIG. 3 are giventhe same symbols and the detailed description thereof is omitted.

According to the solid state imaging device 86 according to the thirdembodiment, a light shielding member 87 of a light absorbing member isarranged between the pixel region 23 and the logic circuit 25, forexample, in the vicinity of a joining face of the first and secondsemiconductor chip units 31 and 45. Hot carrier light that is emittedfrom the MOS transistors of the logic circuit 25 is absorbed by thelight shielding member 87, and is not incident on the photodiodes PD.When the light shielding member 87′ or a combination of the lightshielding members 87 and 87′ is used, it is also similarly possible tosuppress the incidence of hot carrier light on the photodiodes PD.Further, light that is emitted when the protection diode that has beenarranged on the logic circuit side is acting is also able to besuppressed from being incident on the photodiodes PD. Therefore, the hotcarrier light being projected on the pixel region is avoided, and asolid state imaging device in which the image quality is thus improvedis able to be provided.

On the other hand, although light that is exposed on a back surface isincident on the pixels, even if there is a concern that long-wavelengthcomponents that are not completely absorbed by the pixels and arepermeated are reflected on the wiring of the second semiconductor chipunit 45 or the like and are incident once again on the other pixels,long-wavelength components that are permeated are absorbed by the lightshielding members 87 and 87′ of a light absorbing member. In such amanner, the occurrence of color mixing is able to be suppressed.

The pixel region 23 and the control circuit 24 are formed on the firstsemiconductor chip unit 31 and the logic circuit that processes signalsis formed on the second semiconductor chip unit 45 in the solid stateimaging device 86 of the embodiment. Similarly to above, since it is aconfiguration in which the function of the pixel region and the logicfunction are formed and joined on different semiconductor chip units,the most appropriate process forming techniques are respectively able tobe used for the pixel region 23 and the logic circuit 25. Therefore, ahigh-performance solid state imaging device in which the functions ofeach of the pixel region and the logic circuit are able to be adequatelydemonstrated is able to be provided.

5. Fourth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a fourth embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 10. The MOS type solid stateimaging device of the embodiment is a backside-illumination type solidstate imaging device. FIG. 10 illustrates only the configuration of themain portions in which only the region of the light shielding member isillustrated, and since other configurations are the same those of thefirst embodiment, the details thereof are omitted.

In a solid state imaging device 89 according to the fourth embodiment,similarly to above, a light shielding member that shields light, emittedfrom an active element when the active element of the peripheral circuitunit is acting, from being incident on the photodiodes PD of the pixelsbetween the pixel region and the peripheral circuit unit is arranged.The active element is the MOS transistor, the protection diode, or thelike.

In the embodiment, light shielding members 91 and 91′ are configured bya combination of the light shielding members 81 and 81′ using the wiringof the multilayer wiring layer of the first embodiment, and the lightshielding members 84 and 84′ of a single metallic film of the secondembodiment. The light shielding member of the present embodiment isconfigured by the light shielding member 91, the light shielding member91′, or a combination of the light shielding members 91 and 91′.

Since other configurations are the same as those described in the firstembodiment, the corresponding portions are given the same symbols andthe detailed description thereof is omitted.

According to the solid state imaging device 89 according to the fourthembodiment, a light shielding member 91 that is a combination of thelight shielding member 81 that uses the wiring and the light shieldingmember 84 of a single metallic film is arranged between the pixel region23 and the logic circuit 25. In so doing, hot carrier light that isemitted from the MOS transistors of the logic circuit 25 is morereliably able to be suppressed from being incident on the photodiodesPD. The same effects are also accomplished in a case when the lightshielding member 91′ or a combination of the light shielding members 91and 91′ is used. Further, light that is emitted when the protectiondiode that has been arranged on the logic circuit side is acting is alsoable to be suppressed from being incident on the photodiodes PD.Therefore, the hot carrier light being projected on the pixel region isavoided, and a solid state imaging device in which the image quality isthus improved is able to be provided.

In the solid state imaging device 89 of the embodiment, similarly toabove, the pixel region 23 and the control circuit 24 are formed on thefirst semiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45. Similarly toabove, since it is a configuration in which the function of the pixelregion and the logic function are formed and joined on differentsemiconductor chip units, the most appropriate process formingtechniques are respectively able to be used for the pixel region 23 andthe logic circuit 25. Therefore, a high-performance solid state imagingdevice in which the functions of each of the pixel region and the logiccircuit are able to be adequately demonstrated is able to be provided.

6. Fifth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a fifth embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 11. The MOS type solid stateimaging device of the embodiment is a backside-illumination type solidstate imaging device. FIG. 11 illustrates only the configuration of themain portions in which only the region of the light shielding member isillustrated, and since other configurations are the same those of thefirst embodiment, the details thereof are omitted.

In a solid state imaging device 93 according to the fifth embodiment,similarly to above, a light shielding member that shields light, emittedfrom an active element when the active element of the peripheral circuitunit is acting, from being incident on the photodiodes PD of the pixelsbetween the pixel region and the peripheral circuit unit is arranged.The active element is the MOS transistor, the protection diode, or thelike.

In the embodiment, light shielding members 94 and 94′ are configured bya combination of the light shielding members 81 and 81′ using the wiringof the multilayer wiring layer of the first embodiment, and the lightshielding members 87 and 87′ of a light absorbing member of the thirdembodiment. The light shielding member of the present embodiment isconfigured by the light shielding member 94, the light shielding member94′, or a combination of the light shielding members 94 and 94′.

Since other configurations are the same as those described in the firstembodiment, corresponding portions are given the same symbols and thedetailed description thereof is omitted.

According to the solid state imaging device 93 according to the fifthembodiment, a light shielding member 94 that is a combination of thelight shielding member 81 that uses the wiring and the light shieldingmember 87 of a light absorbing member is arranged between the pixelregion 23 and the logic circuit 25. In so doing, hot carrier light thatis emitted from the MOS transistors of the logic circuit 25 is morereliably able to be suppressed from being incident on the photodiodesPD. Further, by the presence of the light shielding member 87 of a lightabsorbing member, light that has permeated through the pixels aresuppressed from reaching the wiring 53 of the second semiconductor chipunit 45, and color mixing caused by light reflected by the wiring 53 isable to be suppressed. The same effects are also accomplished in a casewhen the light shielding member 94′ or a combination of the lightshielding members 94 and 94′ is used. Further, light that is emittedwhen the protection diode that has been arranged on the logic circuitside is acting is also able to be suppressed from being incident on thephotodiodes PD. Therefore, the hot carrier light being projected on thepixel region is avoided, and a solid state imaging device in which theimage quality is thus improved is able to be provided.

In the solid state imaging device 93 of the embodiment, similarly toabove, the pixel region 23 and the control circuit 24 are formed on thefirst semiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45. Similarly toabove, since it is a configuration in which the function of the pixelregion and the logic function are formed and joined on differentsemiconductor chip units, the most appropriate process formingtechniques are respectively able to be used for the pixel region 23 andthe logic circuit 25. Therefore, a high-performance solid state imagingdevice in which the functions of each of the pixel region and the logiccircuit are able to be adequately demonstrated is able to be provided.

7. Sixth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a sixth embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 12. The MOS type solid stateimaging device of the embodiment is a backside-illumination type solidstate imaging device. FIG. 12 illustrates only the configuration of themain portions in which only the region of the light shielding member isillustrated, and since other configurations are the same those of thefirst embodiment, the details thereof are omitted.

In a solid state imaging device 95 according to the sixth embodiment,similarly to above, a light shielding member that shields light, emittedfrom an active element when the active element of the peripheral circuitunit is acting, from being incident on the photodiodes PD of the pixelsbetween the pixel region and the peripheral circuit unit is arranged.The active element is the MOS transistor, the protection diode, or thelike.

In the embodiment, light shielding members 96 and 96′ are configured bya combination of the light shielding members 84 and 84′ of a singlemetallic film of the second embodiment, and the light shielding members87 and 87′ of a light absorbing member of the third embodiment. Thelight shielding member of the present embodiment is configured by thelight shielding member 96, the light shielding member 96′, or acombination of the light shielding members 96 and 96′. In the firstsemiconductor chip unit 31 side, the light shielding member 87 of alight absorbing member is arranged further to the photodiode PD sidethan the light shielding member 84 of a single metallic film.

Since other configurations are the same as those described in the firstembodiment, corresponding portions are given the same symbols and thedetailed description thereof is omitted.

According to the solid state imaging device 93 according to the sixthembodiment, a light shielding member 96 that is a combination of thelight shielding member 84 of a single metallic film and the lightshielding member 87 of a light absorbing member is arranged between thepixel region 23 and the logic circuit 25. In so doing, hot carrier lightthat is emitted from the MOS transistors of the logic circuit 25 is morereliably able to be suppressed from being incident on the photodiodesPD. Further, by the presence of the light shielding member 87 of a lightabsorbing member, light that has permeated through the pixels aresuppressed from reaching the wiring 53 of the second semiconductor chipunit 45, and color mixing caused by light reflected by the wiring 53 isable to be suppressed. The same effects are also accomplished in a casewhen the light shielding member 96′ or a combination of the lightshielding members 96 and 96′ is used. Further, light that is emittedwhen the protection diode that has been arranged on the logic circuitside is acting is also able to be suppressed from being incident on thephotodiodes PD. Therefore, the hot carrier light being projected on thepixel region is avoided, and a solid state imaging device in which theimage quality is thus improved is able to be provided.

Although since, for example, even when photons of a hot carrier arereflected, it is not a photon quantity that influences the actions ofthe logic circuit on the logic circuit 25 side, formation of the lightabsorbing member 87′ is not a necessity, it may be formed in order toraise the light absorption characteristics.

In the solid state imaging device 95 of the embodiment, similarly toabove, the pixel region 23 and the control circuit 24 are formed on thefirst semiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45. Similarly toabove, since it is a configuration in which the function of the pixelregion and the logic function are formed and joined on differentsemiconductor chip units, the most appropriate process formingtechniques are respectively able to be used for the pixel region 23 andthe logic circuit 25. Therefore, a high-performance solid state imagingdevice in which the functions of each of the pixel region and the logiccircuit are able to be adequately demonstrated is able to be provided.

8. Seventh Embodiment Configuration Example of Solid State ImagingDevice

A solid state imaging device according to an embodiment of thedisclosure, particularly a seventh embodiment of the MOS type solidstate imaging device, is illustrated in FIG. 13. The MOS type solidstate imaging device of the embodiment is a backside-illumination typesolid state imaging device. FIG. 13 illustrates only the configurationof the main portions in which only the region of the light shieldingmember is illustrated, and since other configurations are the same thoseof the first embodiment, the details thereof are omitted.

In a solid state imaging device 97 according to the seventh embodiment,similarly to above, a light shielding member that shields light, emittedfrom an active element when the active element of the peripheral circuitunit is acting, from being incident on the photodiodes PD of the pixelsbetween the pixel region and the peripheral circuit unit is arranged.The active element is the MOS transistor, the protection diode, or thelike.

In the second embodiment described above, the light shielding member 84is formed by a single metallic film. If the number of steps is takeninto consideration, a single film is desirable as the light shieldingmember. However, if hole defects of a metallic film or the planarizationof an affixing surface of the first and second semiconductor chip unitsare taken into consideration, forming the light shielding member as asingle layer film may be difficult.

A first light shielding member 99 and a second light shielding member101 of two layers of a single metallic film are arranged in the vicinityof the first and second semiconductor chip units 31 and 45 in thepresent embodiment and on the second semiconductor chip unit 45 side inthe present example. The respective light shielding member 99 and 101are formed in patterns that have openings 99A and 101A in differentpositions. Further, a cylindrical wall member (a so-called via) 102 forsealing is formed between the first light shielding member 99 and thesecond light shielding member 101 so as to surround the circumference ofthe openings 99A and 101A.

In the present embodiment, as shown by the broken lines, a lightshielding member 98′ that is the same configuration may be arranged onthe first semiconductor chip unit 45 side. A first light shieldingmember 99′ and a second light shielding member 101′ of two layers of asingle metallic film are arranged in the light shielding member 98′. Therespective light shielding members 99′ and 101′ are formed in patternsthat have openings 99A′ and 101A′ in different positions. Further, acylindrical wall member (a so-called via) 102′ for sealing is formedbetween the first light shielding member 99′ and the second lightshielding member 101′ so as to surround the circumference of theopenings 99A′ and 101A′.

The light shielding member of the embodiment is able to be configured bythe light shielding member 98, the light shielding member 98′, or acombination of the light shielding members 98 and 98′.

Since other configurations are the same as those described in the firstembodiment, corresponding portions are given the same symbols and thedetailed description thereof is omitted.

According to the solid state imaging device 97 according to the seventhembodiment, the light shielding member 98 is configured by the first andsecond light shielding members 99 and 101 of two layers of a singlemetallic film in which the opening positions are different, and acylindrical wall member 102 that is connected to the first and secondlight shielding members that surround the vicinity of the openings andthat are opposing. Although since even if there are hole defects in thefirst and second light shielding members 99 and 101, the light shieldingmember 98 has a two-layer structure and moreover the cylindrical wallmember 102 is provided, light 103 from below the broken line shown inthe drawings is reliably shielded, and incidence on the photodiodes PDis suppressed. The same effects are also accomplished in a case when thelight shielding member 98′ or a combination of the light shieldingmembers 98 and 98′ is used. Further, light that is emitted when theprotection diode that has been arranged on the logic circuit side isacting is also able to be suppressed from being incident on thephotodiodes PD. Therefore, the hot carrier light being projected on thepixel region is avoided, and a solid state imaging device in which theimage quality is thus improved is able to be provided.

In the solid state imaging device 97 of the embodiment, similarly toabove, the pixel region 23 and the control circuit 24 are formed on thefirst semiconductor chip unit 31 and the logic circuit 25 that processessignals is formed on the second semiconductor chip unit 45. Similarly toabove, since it is a configuration in which the function of the pixelregion and the logic function are formed and joined on differentsemiconductor chip units, the most appropriate process formingtechniques are respectively able to be used for the pixel region 23 andthe logic circuit 25. Therefore, a high-performance solid state imagingdevice in which the functions of each of the pixel region and the logiccircuit are able to be adequately demonstrated is able to be provided.

9. Eighth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly an eighth embodiment of the MOS type solidstate imaging device, is illustrated in FIG. 15. A solid state imagingdevice 104 according to the eighth embodiment is configured by joining,as described above, the first semiconductor chip unit 22 that includesthe pixel region 23, the second semiconductor chip unit 26 that includesthe logic circuit 25, and a third semiconductor chip unit 105 thatfunctions as a light shielding member that absorbs light between thefirst and second semiconductor chip units 22 and 26. The thirdsemiconductor chip unit 105 is formed by a semiconductor such as Ge, forexample, with a narrow band gap, and is formed in a thin film form.

In the solid state imaging device 104, in a case when configured as aback surface exposure type, the first semiconductor chip unit 22 and thesecond semiconductor chip unit 26 are integrally joined with themultilayer wiring layer of each facing the other, while interposing thethird semiconductor chip unit 105. In the solid state imaging device104, in a case when configured as a front surface exposure type, theback surface of the first semiconductor chip unit 22 and the multilayerwiring layer of the second semiconductor chip unit 26 face each otherand are integrally joined, while interposing the third semiconductorchip unit 105.

According to the solid state imaging device 104 according to the eighthembodiment, the first semiconductor chip unit 22 that at least includesthe pixel region and the second semiconductor chip unit 26 that at leastincludes the logic circuit that configures the peripheral circuits arejoined via the third semiconductor chip unit 105 that absorbs light. Bysuch a configuration, even if hot carrier light is emitted from thesecond semiconductor chip unit 26 side, the hot carrier light isshielded by the third semiconductor chip unit 105 and is not incident onthe photodiodes PD of the first semiconductor chip unit 22. Therefore,the hot carrier light being projected on the pixel region is avoided,and a solid state imaging device in which the image quality is thusimproved is able to be provided. With regard to light emitted when theprotection diode is acting is also suppressed from being incident on thephotodiodes PD.

10. Ninth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, particularly a ninth embodiment of the MOS type solid stateimaging device, is illustrated in FIG. 16. The MOS type solid stateimaging device of the embodiment is a back surface exposure type solidstate imaging device. The first embodiment has a configuration in whichthe logic circuit that configures the pixel region and the peripheralcircuits is arranged above and below in the depth direction of thesubstrate by joining the first semiconductor chip unit 31 and the secondsemiconductor chip unit 45. In the ninth embodiment, another embodimentof a configuration in which the pixel region and the peripheral circuitsare arranged above and below, that is, three-dimensionally, is shown.

A solid state imaging device 107 according to the ninth embodiment ishas a control circuit 109 that configures the peripheral circuits, alogic circuit 110 for signal processing, and a pixel transistor group111 formed on a silicon semiconductor substrate 108. A multilayer wiringlayer 112 in which a wiring of a plurality of layers is arranged via aninterlayer insulating film is formed on the semiconductor substrate 108.Further, a silicon epitaxial layer 113 is formed on the multilayerwiring layer 112, and the solid state imaging device 107 is configuredby forming a pixel region 114 in which only the photodiodes PD thatbecome a plurality of photoelectric conversion units aretwo-dimensionally arranged in a line on the epitaxial layer 113. Thepixels are configured by the photodiodes within the epitaxial layer andthe plurality of pixel transistors within the semiconductor substrate108.

In addition, in the embodiment, a light shielding member 115 that isconfigured by any of the light shielding members described above isarranged between the pixel region 114 and the logic circuit 110 thatconfigures at least the peripheral circuit unit. The light shieldingmember 115 is formed on the multilayer wiring layer 112.

According to the solid state imaging device 107 according to the ninthembodiment, the light shielding member 115 is arranged between the pixelregion 114 and the peripheral circuits with a configuration in which thepixel region 114, the logic circuit 110 that configures the peripheralcircuit unit, and the control circuit 109 are arranged above and belowwithin the substrate. By such a configuration, even if hot carrier lightis emitted from the peripheral circuit unit, the hot carrier light isshielded by the light shielding member 115 and is not incident on thephotodiodes PD of the pixel region 114 above. Therefore, the hot carrierlight being projected on the pixel region is avoided, and a solid stateimaging device in which the image quality is thus improved is able to beprovided. With regard to light emitted when the protection diode isacting is also suppressed from being incident on the photodiodes PD.

11. Tenth Embodiment Configuration Example of Solid State Imaging Device

A solid state imaging device according to an embodiment of thedisclosure, in particular a MOS type solid state imaging device of atenth embodiment will be described. The MOs type solid state imagingdevice according to the present embodiment is a front surface exposuretype solid state imaging device. Although the solid state imaging deviceaccording to the tenth embodiment is not shown in the drawings, it isconfigured by a first semiconductor chip unit and a second semiconductorchip unit being integrally joined. The first semiconductor chip unit hasa pixel region in which a pixel composed of a photodiode and a pluralityof pixel transistors arranged in a line in plurality on a thin filmsilicon semiconductor layer, and is composed of a multilayer wiringlayer, a color filter, and an on-chip micro-lens formed on a frontsurface of the semiconductor layer. The second semiconductor chip unithas a logic circuit for signal processing and a peripheral circuit unitincluding a control circuit formed on a silicon substrate, and iscomposed of a multilayer wiring layer on the semiconductor substrate.The logic circuit and the control circuit are configured by elementssuch as MOS transistors.

The first and second semiconductor chip units are joined such that thesemiconductor layer of the first semiconductor chip unit and themultilayer wiring layer of the second semiconductor chip unit face eachother. The first semiconductor chip unit and the second semiconductorchip unit are electrically connected by a similar connected conductor asthat described above.

In the embodiment, any of the light shielding members described above isarranged between the pixel region and the peripheral circuit unit. Thelight shielding member is formed on the second semiconductor chip unitside in the vicinity of a joining surface of the first and secondsemiconductor chip units.

According to the front surface exposure type solid state imaging deviceaccording to the tenth embodiment, a light shielding member is arrangedbetween the pixel region and the peripheral circuit unit that arearranged above and below in close proximity. By such a configuration,even if hot carrier light is emitted from the logic circuit of theperipheral circuit unit, the hot carrier light is shielded by the lightshielding member and is not incident on the photodiodes PD of the pixelregion above. Therefore, the hot carrier light being projected on thepixel region is avoided, and a solid state imaging device in which theimage quality is thus improved is able to be provided. With regard tolight emitted when the protection diode is acting is also suppressedfrom being incident on the photodiodes PD.

In the solid state imaging device of the embodiment, similarly to above,the pixel region is formed on the first semiconductor chip unit and theperipheral circuit unit is formed on the second semiconductor chip unit.Similarly to above, since it is a configuration in which the function ofthe pixel region and the functions of the peripheral circuit unit areformed and joined on different semiconductor chip units, the mostappropriate process forming techniques are respectively able to be usedfor each of the pixel region and the peripheral circuit unit. Therefore,a high-performance solid state imaging device in which the functions ofeach of the pixel region and the logic circuit are able to be adequatelydemonstrated is able to be provided.

12. Eleventh Embodiment Configuration Example of Electronic Apparatus

The solid state imaging device according to the embodiments of thedisclosure described above is able to be applied to an electronicapparatus such as, for example, a camera system such as a digital cameraor a video camera, a mobile phone that has an imaging function, or otherapparatuses including an imaging function.

An eleventh embodiment that is applied to a camera as one example of theelectronic apparatus according to an embodiment of the disclosure isillustrated in FIG. 17. A camera according to the eleventh embodiment isan example of a video camera that is able to image still images ormoving images. A camera 121 of the embodiment includes a solid stateimaging device 122 and an optical system 123 that leads incident lightto a light receiving sensor unit of the solid state imaging device 122.Further, the camera 121 includes a shutter device 124, a driving circuit125 that drives the solid state imaging device 122, and a signalprocessing circuit 126 that processes output signals of the solid stateimaging device 122.

Any of the solid state imaging devices of the embodiments describedabove is applied as the solid state imaging device 122. The opticalsystem (optical lens) 123 forms imaging light (incident light) from asubject as an image on an imaging surface of the solid state imagingdevice 122. In so doing, signal charges are accumulated within the solidstate imaging device 122 for a fixed period of time. The optical system123 may be an optical lens system that is configured from a plurality ofoptical lenses. The shutter device 124 controls the exposure period andthe shielding period of light to and from the solid state imaging device122. The driving circuit 125 supplied a driving signal that controls atransfer action of the solid state imaging device 122 and a shutteraction of the shutter device 124. Signal transfer of the solid stateimaging device 122 is performed by the driving signal (timing signal)provided from the driving circuit 125. The signal processing circuit 126performs various types of signal processing. An imaging signal on whicha signal processing is performed is stored on a memory medium such as amemory, or is output on a monitor.

According to the electronic apparatus according to the eleventhembodiment, incidence of light such as hot carrier light from activeelements such as the MOS transistors or the diodes of the peripheralcircuit unit, when acting, to the photodiodes is able to be suppressed.It is therefore possible to provide an electronic apparatus with highimage quality. For example, a camera in which the image quality isimproved is able to be provided.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A solid-state imaging device comprising: a pixelregion that is formed at a light-incident side of a first substrate andin which a plurality of pixels that include photoelectric conversionunits is arranged; a second substrate that includes a circuit unit thatis below the pixel region in a substrate depth direction; a firstmultilayer-wiring layer that includes a first wiring layer having afirst wiring and a second wiring layer having a second wiring; and asecond multilayer-wiring layer formed at a side of the second substrate,wherein, the first wiring is above the second wiring, the firstmultilayer-wiring layer is disposed between the pixel region and thecircuit unit, a portion of the first wiring extending in a firstdirection overlaps a portion of the second wiring extending in the firstdirection, the second multilayer-wiring layer includes a third wiringlayer having a third wiring and a fourth wiring layer having a fourthwiring, and the first substrate and the second substrate are affixed toone another such that the first multilayer-wiring layer and the secondmultilayer-wiring layer face each other.
 2. The solid-state imagingdevice according to claim 1, wherein the circuit unit includes aplurality of transistors.
 3. The solid-state imaging device according toclaim 1, further comprising: an adhesive layer between the first andsecond multilayer-wiring layers.
 4. The solid-state imaging deviceaccording to claim 3, wherein the second multilayer-wiring layer isdisposed between the pixel region and a plurality of transistors in thecircuit unit.
 5. The solid-state imaging device according to claim 4,wherein the third wiring of the second multilayer-wiring layer is abovethe fourth wiring of the second multilayer-wiring layer, and a portionof the third wiring of the second multilayer-wiring layer extending in afirst direction overlaps a portion of the fourth wiring of the secondmultilayer-wiring layer extending in the first direction.
 6. Thesolid-state imaging device according to claim 5, wherein at least one ofthe third wiring of the second multilayer-wiring layer or the fourthwiring of the second multilayer-wiring layer reflect light.
 7. Thesolid-state imaging device according to claim 1, wherein a firstdistance in which the first wiring overlaps the second wiring is greaterthan a second distance, wherein the second distance is a distancebetween the first wiring and the second wiring.
 8. The solid-stateimaging device according to claim 1, wherein a first distance in whichthe third wiring of the second multilayer-wiring layer overlaps thefourth wiring of the second multilayer-wiring layer is greater than asecond distance, wherein the second distance is a distance between thethird wiring of the second multilayer-wiring layer and the fourth wiringof the second multilayer-wiring layer.
 9. The solid-state imaging deviceaccording to claim 1, wherein each of the first wiring and the secondwiring includes at least one metal material.
 10. The solid-state imagingdevice according to claim 9, wherein the metal material is copper. 11.The solid-state imaging device according to claim 1, wherein the firstwiring layer and the second wiring layer are formed within an interlayerinsulating film.
 12. The solid-state imaging device according to claim11, wherein each of the first wiring and the second wiring are pixelwirings.
 13. The solid-state imaging device according to claim 12,wherein each of the first wiring and the second wiring are dummywirings.
 14. The solid-state imaging device according to claim 12,wherein one of the first wiring or the second wiring is a pixel wiring.15. The solid-state imaging device according to claim 14, wherein theother of the first wiring or the second wiring is a dummy wiring. 16.The solid-state imaging device according to claim 1, further comprising:a light-shielding member of a single metallic film which covers thepixel region, wherein the light-shielding member is arranged between thepixel region and the circuit unit.
 17. The solid-state imaging deviceaccording to claim 16, wherein the light-shielding member includes atleast one of tungsten (W), copper (Cu), titanium (Ti), titanium nitride(TiN), and/or carbon (C).
 18. The solid-state imaging device accordingto claim 1, wherein at least one of the first wiring or the secondwiring reflect light.
 19. The solid-state imaging device according toclaim 1, wherein the first wiring overlaps a plurality of openings inthe second wiring.
 20. The solid-state imaging device according to claim1, wherein the solid-state imaging device is a backside-illuminationtype solid-state imaging device.
 21. The solid-state imaging deviceaccording to claim 1, further comprising: a reflection prevention filmdisposed above at least one photoelectric conversion unit.
 22. Thesolid-state imaging device according to claim 1, wherein the firstwiring and the second wiring correspond to a vertical signal line. 23.The solid-state imaging device according to claim 1, wherein the pixelregion and the circuit unit are electrically connected via a connectedconductor that penetrates the first multilayer-wiring layer.
 24. Thesolid-state imaging device according to claim 1, further comprising: alight-absorbing member arranged between the pixel region and the circuitunit.
 25. The solid-state imaging device according to claim 24, whereinthe light-absorbing member is formed of a single film using asemiconductor with a small band gap.
 26. The solid-state imaging deviceaccording to claim 1, wherein each pixel of the plurality of pixelsincludes a plurality of pixel transistors.
 27. The solid-state imagingdevice according to claim 1, further comprising: a plurality of colorfilters disposed over the photoelectric conversion units; and aplurality of on-chip lenses disposed over the plurality of colorfilters.
 28. An electronic apparatus comprising: a solid-state imagingdevice; an optical system that guides incident light to photoelectricconversion units of the solid-state imaging device; and a signalprocessing circuit that processes an output signal of the solid-stateimaging device, wherein the solid-state imaging includes: a pixel regionthat is formed at a light-incident side of a first substrate and inwhich a plurality of pixels that include photoelectric conversion unitsis arranged; a second substrate that includes a circuit unit that isbelow the pixel region in a substrate depth direction; a firstmultilayer-wiring layer that includes a first wiring layer having afirst wiring and a second wiring layer having a second wiring; and asecond multilayer-wiring layer formed at a side of the second substrate,wherein, the first wiring is above the second wiring, the firstmultilayer-wiring layer is disposed between the pixel region and thecircuit unit, a portion of the first wiring extending in a firstdirection overlaps a portion of the second wiring extending in the firstdirection, the second multilayer-wiring layer includes a third wiringlayer having a third wiring and a fourth wiring layer having a fourthwiring, and the first substrate and the second substrate are affixed toone another such that the first multilayer-wiring layer and the secondmultilayer-wiring layer face each other.
 29. A solid-state imagingdevice comprising: a pixel region that is formed at a light-incidentside of a substrate and in which a plurality of pixels that includephotoelectric conversion units is arranged; a circuit unit that is belowthe pixel region in a substrate depth direction; a multilayer-wiringlayer that includes a first wiring layer having a first wiring and asecond wiring layer having a second wiring; and a light-shielding memberof a single metallic film which covers the pixel region, wherein thelight-shielding member is arranged between the pixel region and thecircuit unit, wherein, the first wiring is above the second wiring, themultilayer-wiring layer is disposed between the pixel region and thecircuit unit, and a portion of the first wiring extending in a firstdirection overlaps a portion of the second wiring extending in the firstdirection.